Optical data storage in InGaN/GaN heterostructures

被引：12

作者：

Shmagin, IK ^{[1
]}

Muth, JF ^{[1
]}

Kolbas, RM ^{[1
]}

Dupuis, RD ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Park, J ^{[1
]}

Shelton, BS ^{[1
]}

Lambert, DJH ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECT RES CTR,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.119900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical storage data was realized using an InGaN/GaN single heterostructure. It was observed that exposure to a high power density ultraviolet light temporarily changes the optical properties of the InGaN epitaxial layer. The photo-induced changes can be observed under an optical microscope with low intensity ultraviolet excitation. This effect was used to create high contrast optical patterns on the sample at room temperature and 77 K. The photo-induced changes completely disappear in about four hours at room temperature. After the recorded pattern is erased. the information can be rewritten without a change in efficiency or retention time. (C) 1997 American Institute of Physics.

引用

页码：1382 / 1384

页数：3

共 50 条

[1] Optical metastability in InGaN/GaN heterostructures
Shmagin, IK
Muth, JF
Kolbas, RM
Dupuis, RD
Grudowski, PA
Eiting, CJ
Park, J
Shelton, BS
Lambert, DJH
[J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 375 - 378
[2] Optical metastability in InGaN/GaN heterostructures
Shmagin, IK
Muth, JF
Kolbas, RM
Dupuis, RD
Grudowski, PA
Eiting, CJ
Park, J
Shelton, BS
Lambert, DJH
[J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 375 - 378
[3] Optical characterization of InGaN layers and GaN/InGaN/GaN double heterostructures
Justus-Liebig-Univ, Giessen, Germany
[J]. Mater Sci Forum, pt 2 (1311-1314):
[4] Optical characterization of InGaN layers and GaN/InGaN/GaN double heterostructures
Graber, A
Averbeck, R
Barnhofer, U
Riechert, H
Tews, H
[J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1311 - 1314
[5] Optical transitions in InGaN/GaN double heterostructures
Ryu, MY
Yu, PW
Shin, EJ
Song, NW
Lee, JI
Kim, D
Oh, ES
Park, YJ
Park, HS
Kim, TI
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1021 - S1024
[6] Coherent acoustic phonons in GaN and GaN/InGaN heterostructures
Stanton, CJ
Sanders, GD
Liu, RLL
Kim, CS
Yahng, JS
Oh, E
Kim, DS
Sun, CK
[J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS VI, 2002, 4643 : 124 - 138
[7] Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
Davies, S. C.
Mowbray, D. J.
Ranalli, F.
Wang, T.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (25)
[8] Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures
Hamzah, Nur Atiqah
Md Sahar, Mohd Ann Amirul Zulffiqal
Tan, Aik Kwan
Ahmad, Mohd Anas
Abdul Malik, Muhammad Fadhirul Izwan
Loo, Chin Chyi
Chang, Wei Sea
Ng, Sha Shiong
[J]. MICROELECTRONICS INTERNATIONAL, 2023, 40 (01) : 8 - 16
[9] InGaN/GaN heterostructures grown by submonolayer deposition
Tsatsulnikov, A. F.
Lundin, W. V.
Zavarin, E. E.
Sakharov, A. V.
Musikhin, Yu. G.
Usov, S. O.
Mizerov, M. N.
Cherkashin, N. A.
[J]. SEMICONDUCTORS, 2012, 46 (10) : 1335 - 1340
[10] InGaN/GaN heterostructures grown by submonolayer deposition
A. F. Tsatsulnikov
W. V. Lundin
E. E. Zavarin
A. V. Sakharov
Yu. G. Musikhin
S. O. Usov
M. N. Mizerov
N. A. Cherkashin
[J]. Semiconductors, 2012, 46 : 1335 - 1340

← 1 2 3 4 5 →