Optical metastability in InGaN/GaN heterostructures

被引：0

作者：

Shmagin, IK ^{[1
]}

Muth, JF ^{[1
]}

Kolbas, RM ^{[1
]}

Dupuis, RD ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Park, J ^{[1
]}

Shelton, BS ^{[1
]}

Lambert, DJH ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical metastability was studied in an InGaN/GaN single heterostructure. It was observed that an exposure to a high intensity ultraviolet (UV) light temporaryly changes the optical properties of the InGaN/GaN epitaxial layer. The photo-induced changes wee used to create high contrast optical patterns on the sample at room temperature and 77 K. The photo-induced patterns were viewed under low-intensity illumination with UV light from the same light source.

引用

页码：375 / 378

页数：4

共 50 条

[1] Optical metastability in InGaN/GaN heterostructures
Shmagin, IK
Muth, JF
Kolbas, RM
Dupuis, RD
Grudowski, PA
Eiting, CJ
Park, J
Shelton, BS
Lambert, DJH
[J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 375 - 378
[2] Optical characterization of InGaN layers and GaN/InGaN/GaN double heterostructures
Justus-Liebig-Univ, Giessen, Germany
[J]. Mater Sci Forum, pt 2 (1311-1314):
[3] Optical characterization of InGaN layers and GaN/InGaN/GaN double heterostructures
Graber, A
Averbeck, R
Barnhofer, U
Riechert, H
Tews, H
[J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1311 - 1314
[4] Optical data storage in InGaN/GaN heterostructures
Shmagin, IK
Muth, JF
Kolbas, RM
Dupuis, RD
Grudowski, PA
Eiting, CJ
Park, J
Shelton, BS
Lambert, DJH
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (10) : 1382 - 1384
[5] Optical transitions in InGaN/GaN double heterostructures
Ryu, MY
Yu, PW
Shin, EJ
Song, NW
Lee, JI
Kim, D
Oh, ES
Park, YJ
Park, HS
Kim, TI
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1021 - S1024
[6] Coherent acoustic phonons in GaN and GaN/InGaN heterostructures
Stanton, CJ
Sanders, GD
Liu, RLL
Kim, CS
Yahng, JS
Oh, E
Kim, DS
Sun, CK
[J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS VI, 2002, 4643 : 124 - 138
[7] Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
Davies, S. C.
Mowbray, D. J.
Ranalli, F.
Wang, T.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (25)
[8] Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures
Hamzah, Nur Atiqah
Md Sahar, Mohd Ann Amirul Zulffiqal
Tan, Aik Kwan
Ahmad, Mohd Anas
Abdul Malik, Muhammad Fadhirul Izwan
Loo, Chin Chyi
Chang, Wei Sea
Ng, Sha Shiong
[J]. MICROELECTRONICS INTERNATIONAL, 2023, 40 (01) : 8 - 16
[9] InGaN/GaN heterostructures grown by submonolayer deposition
A. F. Tsatsulnikov
W. V. Lundin
E. E. Zavarin
A. V. Sakharov
Yu. G. Musikhin
S. O. Usov
M. N. Mizerov
N. A. Cherkashin
[J]. Semiconductors, 2012, 46 : 1335 - 1340
[10] InGaN/GaN heterostructures grown by submonolayer deposition
Tsatsulnikov, A. F.
Lundin, W. V.
Zavarin, E. E.
Sakharov, A. V.
Musikhin, Yu. G.
Usov, S. O.
Mizerov, M. N.
Cherkashin, N. A.
[J]. SEMICONDUCTORS, 2012, 46 (10) : 1335 - 1340

← 1 2 3 4 5 →