Study of cast-mono silicon solar cells with boron-doped PERL structure

In this paper, passivated emitter and rear locally diffused (PERL) structure was employed on cast-mono silicon wafers to achieve high efficiency Some critical fabrication parameters, such as sheet resistance, thickness of rear passivation stacks, laser pattern and sintering temperature, were discussed and optimized The average and best efficiencies reached to 19.20% and 19.54% with 80 omega/& SOU; sheet resistance (after oxidation), 240 nm rear SiO2/SiNx stacks, 1.2 mm laser pitch and 600 degrees C Al sintering Afterwards, low temperature annealing in N-2 or air was performed on prepared cells The efficiency of cells gained 0.18%abs after 150 degrees C annealing in N-2 Finally, light induced degradation (LID) was studied PERL solar cells on cast-mono silicon degenerated 0.29%abs after illuminated with one sun for 200 minutes, which is much less than that of mono ones (1.04%abs)due to the comparatively low interstitial oxygen concentration in cast-mono wafers.