Nonlinear photoluminescence in atomically thin layered WSe2 arising from diffusion-assisted exciton-exciton annihilation

被引:214
|
作者
Mouri, Shinichiro [1 ]
Miyauchi, Yuhei [1 ,2 ,3 ]
Toh, Minglin [4 ]
Zhao, Weijie [5 ,7 ]
Eda, Goki [5 ,6 ,7 ]
Matsuda, Kazunari [1 ]
机构
[1] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
[2] Japan Sci & Technol Agcy, Precursory Res Embryon Sci & Technol, Kawaguchi, Saitama 3320012, Japan
[3] Nagoya Univ, Grad Sch Sci, Chikusa Ku, Nagoya, Aichi 4648601, Japan
[4] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[5] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[6] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[7] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore
基金
新加坡国家研究基金会; 日本科学技术振兴机构;
关键词
CARRIER MULTIPLICATION; VALLEY POLARIZATION; MONOLAYER MOS2; MONO LAYER; GENERATION; DYNAMICS;
D O I
10.1103/PhysRevB.90.155449
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied multiexciton dynamics in monolayer WSe2 using nonlinear photoluminescence (PL) spectroscopy and Monte Carlo simulations. We observed strong nonlinear saturation behavior of exciton PL with increasing excitation power density and long-distance exciton diffusion, reaching several micrometers. We demonstrated that the diffusion-assisted exciton-exciton annihilation (EEA) model accounts for the observed nonlinear PL behavior. The long-distance exciton diffusion and subsequent efficient EEA process determined the unusual multiexciton dynamics in atomically thin layered transition metal dichalcogenides.
引用
收藏
页数:5
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