Demonstration of III-V semiconductor-based nonvolatile memory devices

被引：6
|
作者：
Pan, ZW
Shum, K [1 ]
机构：
[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
[2] CUNY, Grad Ctr, New York, NY 10031 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期
关键词：
D O I：
10.1063/1.125802
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using the concept for nonvolatile memories recently proposed by K. Shum, J. Q. Zhou, W. Zhang, L. F. Zeng, and M. C. Tamargo [Appl. Phys. Lett. 71, 2487 (1997)], a promising nonvolatile memory device has been designed and demonstrated using a III-V semiconductor quantum structure. Preliminary data on the device's stability and reliability reveals that further improvements are possible on the cycling endurance and retention time. (C) 2000 American Institute of Physics. [S0003-6951(00)01704-6].
引用
收藏
页码：505 / 507
页数：3
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