Mechanical Properties of Poly 3C-SiC Thin Films according to Carrier Gas (H2) Concentration

被引：1

作者：

Chung, Gwiy-Sang ^{[1
]}

Han, Ki-Bong ^{[1
]}

机构：

[1] Univ Ulsan, Sch Elect Engn, Ulsan, South Korea

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Poly; 3C-SiC; Nano Indentation; AFM; Young's Modulus; Hardness; BULGE TEST; MODULUS; RATIO;

D O I：

10.4028/www.scientific.net/MSF.600-603.867

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10 % carrier gas (H(2)) concentrations using Nano-Indentation. When carrier gas (H(2)) concentration was 10 %, it has been proved that the mechanical properties, Young's Modulus and Hardness, of 3C-SiC are the best of them. In the case of 10 % carrier gas (H(2)) concentration, Young's Modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to carrier gas (H(2)) concentrations was investigated by AFM (atomic force microscope), when carrier gas (H(2)) concentration was 10 %, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin films to MEMS applications, carrier gas (H(2)) concentration's rate should increase to obtain better mechanical properties and surface roughness.

引用

页码：867 / 870

页数：4

共 50 条

[21] Correlation between epitaxial growth conditions of 3C-SiC thin films on Si and mechanical behavior of 3C-SiC self-suspended membranes
Gourbeyre, C
Chassagne, T
Le Berre, M
Ferro, G
Gautier, E
Monteil, Y
Barbier, D
SENSORS AND ACTUATORS A-PHYSICAL, 2002, 99 (1-2) : 31 - 34
[22] Optical and surface properties of 3C-SiC thin epitaxial films grown at different temperatures on 4H-SiC substrates
Wang, Bingjun
Yin, Junhua
Chen, Daihua
Long, Xianjian
Li, Lei
Lin, Hao-Hsiung
Hu, Weiguo
Talwar, Devki N.
Jia, Ren-Xu
Zhang, Yu-Ming
Ferguson, Ian T.
Sun, Wenhong
Feng, Zhe Chuan
Wan, Lingyu
SUPERLATTICES AND MICROSTRUCTURES, 2021, 156
[23] Characteristics of Pd-poly Crystalline 3C-SiC Schottky Diodes for High Temperature H2 Microsensors
Ahn, Jeong-Hak
Yoon, Kyu-Hyung
Chung, Gwiy-Sang
IFOST 2008: PROCEEDING OF THE THIRD INTERNATIONAL FORUM ON STRATEGIC TECHNOLOGIES, 2008, : 202 - 204
[24] Growth and characterization of thin PTCDA films on 3C-SiC(001)c(2 x 2)
Gustafsson, J. B.
Moons, E.
Widstrand, S. M.
Johansson, L. S. O.
SURFACE SCIENCE, 2006, 600 (20) : 4758 - 4764
[25] Reaction of thin Ni films with (001) 3C-SiC at 700°C
Gasser, SM
Bachli, A
Garland, CM
Kolawa, E
Nicolet, MA
MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 529 - 534
[26] Mechanical properties and morphology of polycrystalline 3C-SiC films deposited on Si and SiO2 by LPCVD
Fu, XA
Dunning, J
Rajgopal, S
Zhang, M
Zorman, CA
Mehregany, M
THIN FILMS-STRESSES AND MECHANICAL PROPERTIES X, 2004, 795 : 381 - 386
[27] Properties of heteroepitaxial 3C-SiC films grown by LPCVD
Yamaguchi, YI
Nagasawa, H
Shoki, T
Annaka, N
Mitsui, H
SENSORS AND ACTUATORS A-PHYSICAL, 1996, 54 (1-3) : 695 - 699
[28] MECHANICAL-PROPERTIES OF POLYCRYSTALLINE 3C-SIC DEPOSITS
IVANOVA, LM
KOPEV, IM
BOTVINA, LR
INORGANIC MATERIALS, 1995, 31 (09) : 1101 - 1104
[29] Characterization of electrical contacts on polycrystalline 3C-SiC thin films
Castaldini, A
Cavallini, A
Rossi, M
Cocuzza, M
Ricciardi, C
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 745 - 748
[30] Optical and structural properties of polycrystalline 3C-SiC films
Haddad-Adel, A.
Inokuma, T.
Kurata, Y.
Hasegawa, S.
APPLIED PHYSICS LETTERS, 2006, 89 (18)

← 1 2 3 4 5 →