Drift reduction in a scanning electrostatic force microscope for surface profile measurement

被引:1
|
作者
Jia, Zhigang [1 ]
Ito, So [1 ]
Goto, Shigeaki [1 ]
Hosobuchi, Keiichiro [1 ]
Shimizu, Yuki [1 ]
Gao, Wei [1 ]
机构
[1] Tohoku Univ, Dept Nanomech, Sendai, Miyagi 9808579, Japan
基金
日本学术振兴会;
关键词
SPM; EFM; drift; scan mode; resonator; frequency shift; probe; MICROOPTICS;
D O I
10.1088/0957-0233/25/9/094001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of drifts on the measurement results of an electrostatic force microscope (EFM) based on a dual-height method for surface profile measurement is analyzed. Two types of drifts and their influence on the EFM measurement are discussed by computer simulation. It is figured out that the mechanical drift has a larger impact compared to the resonance frequency drift for the specific EFM with the conventional round-trip scan mode. It is also verified that the profile reconstruction algorithm of the dual-height method for separating the electric property distribution and the surface profile of the surface has an effect of magnifying the drift error in the result of surface profile measurement, which is a much more significant measurement of uncertainty sources for the developed EFM compared with an ordinary scanning probe microscope (SPM). A new vertical reciprocating scan (VRS) mode is then employed to reduce the influences of the drifts. The feasibility of the VRS mode is demonstrated by computer simulation and measurement experiments with a diffraction grating.
引用
收藏
页数:9
相关论文
共 50 条
  • [41] Scanning acoustic force microscope investigations of surface acoustic waves
    Hesjedal, T
    Chilla, E
    Frohlich, HJ
    SURFACE AND INTERFACE ANALYSIS, 1997, 25 (7-8) : 569 - &
  • [42] Dissolution of the periclase (001) surface: A scanning force microscope study
    Jordan, G
    Higgins, SR
    Eggleston, CM
    AMERICAN MINERALOGIST, 1999, 84 (1-2) : 144 - 151
  • [43] Combined surface plasmon resonance and scanning force microscope instrument
    Chen, X
    Davies, MC
    Roberts, CJ
    Shakesheff, KM
    Tendler, SJB
    Williams, PM
    Davies, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 1582 - 1586
  • [44] SEMICONDUCTOR CHARACTERIZATION BY SCANNING FORCE MICROSCOPE SURFACE PHOTOVOLTAGE MICROSCOPY
    WEAVER, JMR
    WICKRAMASINGHE, HK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1562 - 1565
  • [45] ELECTROSTATIC FORCE MICROSCOPE IMAGING ANALYZED BY THE SURFACE-CHARGE METHOD
    WATANABE, S
    HANE, K
    OHYE, T
    ITO, M
    GOTO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (05): : 1774 - 1781
  • [46] A research on the Surface Charge with Different Coating Tip by Electrostatic Force Microscope
    Sun, Zhi
    Wang, Xuan
    Song, Wei
    Lei, Qingquan
    2013 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (CEIDP), 2013, : 295 - 297
  • [47] Measurement of Force Curve due to Electrostatic Charge on a Single Particle using Atomic Force Microscope
    Matsuyama, Tatsushi
    Ohtsuka, Masa-aki
    Yamamoto, Hideo
    KONA POWDER AND PARTICLE JOURNAL, 2008, 26 : 238 - 245
  • [49] Surface Profile Measurement Using a Modified Stereo Microscope
    Gao, Jian
    Qiang, Xuefeng
    Wu, Di
    Huang, Peisen
    DIMENSIONAL OPTICAL METROLOGY AND INSPECTION FOR PRACTICAL APPLICATIONS, 2011, 8133
  • [50] Scanning force microscope measurement of the parameters of the profiles of submillimeter VLSI components
    Gornev, ES
    Novikov, YA
    Plotnikov, YI
    Rakov, AV
    MEASUREMENT TECHNIQUES, 2001, 44 (01) : 44 - 48