Position and Frequency Control of Strain-induced Quantum Emitters in WSe2 Monolayers

被引：0
|
作者：
Kim, Hyoju [1 ]
Moon, Jong Sung [1 ]
Noh, Gichang [2 ,3 ]
Lee, Jieun [2 ,3 ]
Kim, Je-Hyung [1 ]
机构：
[1] Ulsan Natl Inst Sci & Technol UNIST, Sch Nat Sci, Dept Phys, Ulsan 44919, South Korea
[2] Ajou Univ, Dept Phys, Suwon 16499, South Korea
[3] Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By integrating WSe2 monolayers with a nanopatterned Si micro-cantilever, we create the quantum emitters at deterministic sites and control their frequency with voltages. Also, reduction of the fine-structure splitting is observed by engineering the strain. (C) 2020 The Author(s)
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