Homogeneous CVD alpha-Si:H thin film based position sensitive photodetector

The design, fabrication and characterization of hydrogenated amorphous silicon (alpha-Si:H) position sensitive photodetectors (PSP) are described. Thin undoped alpha-Si:H films were deposited by homogeneous chemical vapour deposition using thermal decomposition of silane at low gas pressure. The thin films were characterized by their dark and photoconductivity, optical and CPM measurements. The optical band gap, defect density and photosensitivity were controlled. The PSP had a Schottky-type structure, ITO/alpha-Si:H/Pd on a glass substrate and their position characteristics at different light probe intensities were measured. Copyright (C) 1996 Elsevier Science Ltd