Homogeneous CVD alpha-Si:H thin film based position sensitive photodetector

被引：6
|
作者：
Toneva, A
Mihailova, T
Sueva, D
Georgiev, S
机构：
[1] UNIV SOFIA,FAC PHYS,SOFIA 1126,BULGARIA
[2] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,SOFIA 1784,BULGARIA
来源：
VACUUM | 1996年 / 47卷 / 10期
关键词：
Number:; F-450; Acronym:; MEST; Sponsor: Ministry of Education; Science and Technology;
D O I：
10.1016/0042-207X(96)00158-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The design, fabrication and characterization of hydrogenated amorphous silicon (alpha-Si:H) position sensitive photodetectors (PSP) are described. Thin undoped alpha-Si:H films were deposited by homogeneous chemical vapour deposition using thermal decomposition of silane at low gas pressure. The thin films were characterized by their dark and photoconductivity, optical and CPM measurements. The optical band gap, defect density and photosensitivity were controlled. The PSP had a Schottky-type structure, ITO/alpha-Si:H/Pd on a glass substrate and their position characteristics at different light probe intensities were measured. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码：1207 / 1209
页数：3
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