Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi3TaTiO9 solid solution films by MOCVD and their properties

被引:5
|
作者
Mitsuya, M
Osada, M
Saito, K
Funakubo, H
机构
[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[3] Philips Japan Ltd, Applicat Lab, Analyt Dept, Sagamihara, Kanagawa 2280803, Japan
关键词
solid solutions; chemical vapor deposition processes; inorganic compounds; ferroelectric materials;
D O I
10.1016/S0022-0248(01)01985-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Thin films of solid solution of SrBi2Ta0.7Nb0.3)(2)O-9-Bi3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1 )Pt/Ti/SiO2/Si substrates at 650degreesC by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (10 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)(2)O-9 film. Moreover, Curie temperature of this material with x = 0.3 was 440degreesC and was almost the same as that of Sr0.8Bi2.2(Ta(0.7)Nb0.(3))(2)O-9. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:473 / 477
页数:5
相关论文
共 50 条
  • [41] Electrical properties of ferroelectric (SrBi2Ta2O9)(1-x)(Bi3TiNbO9)(x) solid solution
    Zhu, YF
    Zhang, XB
    Gu, PZ
    Joshi, PC
    Desu, SB
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (46) : 10225 - 10235
  • [42] Dielectric and Piezoelectric Properties of Nonstoichiometric SrBi2Ta2O9 and SrBi2Nb2O9 Ceramics
    J. A. Cho
    S. E. Park
    T. K. Song
    M. H. Kim
    H. S. Lee
    S. S. Kim
    Journal of Electroceramics, 2004, 13 : 515 - 518
  • [43] Dielectric and piezoelectric properties of nonstoichiometric SrBi2Ta2O9 and SrBi2Nb2O9 ceramics
    Cho, JA
    Park, SE
    Song, TK
    Kim, MH
    Lee, HS
    Kim, SS
    JOURNAL OF ELECTROCERAMICS, 2004, 13 (1-3) : 515 - 518
  • [44] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS
    AMANUMA, K
    HASE, T
    MIYASAKA, Y
    APPLIED PHYSICS LETTERS, 1995, 66 (02) : 221 - 223
  • [45] Sintering and properties of SrBi2(Ta1−xVx)2O9 ceramics
    Jiin-Jyh Shyu
    Chih-Chung Lee
    Journal of Materials Science, 2003, 38 : 721 - 726
  • [46] Investigation of reversible and irreversible polarizations in thin films of SrBi2(Ta0.5,Nb0.5)2O9
    Bhattacharyya, S
    Saha, S
    Krupanidhi, SB
    THIN SOLID FILMS, 2002, 422 (1-2) : 155 - 160
  • [47] A structural study of SrBi2Ta2O9-Bi3TiNbO9 ferroelectric thin films
    Ching-Prado, E
    Pérez, W
    Dobal, PS
    Katiyar, RS
    Tirumala, S
    Desu, SB
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 173 - 178
  • [48] Full chemical fabrication of SrBi2(Ta,Nb)2O9 ferroelectric thin film capacitors
    Yi, J.H.
    Thomas, P.
    Manier, M.
    Mercurio, J.P.
    Integrated Ferroelectrics, 1999, 23 (01): : 77 - 88
  • [49] Dielectric properties and relaxation of SrBi2(Nb0.25Ta0.75)2O9 ceramic at RF frequency
    Liu, JZ
    Kwok, KW
    Chan, HLW
    Choy, CL
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2004, 24 (06) : 1769 - 1773
  • [50] Effects of Bi2O3 buffer layer on ferroelectric properties of SrBi2Ta2O9 thin films by liquid-delivery MOCVD
    Shin, WC
    Choi, KJ
    Seong, NJ
    Yoon, SG
    INTEGRATED FERROELECTRICS, 2001, 36 (1-4) : 295 - 304