Structural, electrical and optical properties of CuGaTe2 absorber for thin-film solar cells

被引：1

作者：

Messous, Ammar ^{[1
]}

Bouloufa, Abdesselam ^{[1
]}

Djessas, Kamal ^{[2
]}

Bouchama, Idris ^{[1
,3
]}

机构：

[1] Univ Ferhat Abbas Setif 1, LEM, Setif 19000, Algeria

[2] PROMES CNRS, Matriaux & Energie Solaire, Laboratoire Procedes, Perpignan 66100, France

[3] Univ Msila, Faculte Technol, Dept Elect, Msila, Algeria

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10 | 2014年 / 11卷 / 9-10期

关键词：

CuGaTe2; CSVT; structural properties; thin films; PHOTOLUMINESCENCE; CRYSTALS;

D O I：

10.1002/pssc.201300657

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Near-stoichiometry composition CuGaTe2 (CGT) thin films prepared by close-spaced vapour transport (CSVT) with copper excess in the source has been investigated and was confirmed by energy dispersive spectroscopy. The influence of temperature substrate on structural properties of CGT was studied, with the optimal substrate temperature at 480 degrees C. Morphological and structural analyses allowed identifying the type of crystallites. Crystalline phases of the films were examined using X-ray diffraction. A strong (112) orientation perpendicular to substrate plane was observed and additional reflections planes were also detected. The electrical resistivity was determined using the four probe method and lies in the 0.127-0.271 Omega cm range. The direct bandgap is about 1.7 eV and resistivity showed a low value. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1443 / 1446

页数：4

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