Superconducting Nd1.85Ce0.15CuO4 films grown by the pulsed electron deposition technique

被引：10
|
作者：
Guo, Y. F.
Chen, L. M.
Lei, M.
Guo, X.
Li, P. G.
Tang, W. H. [1 ]
机构：
[1] Chinese Acad Sci, Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Peoples R China
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2006年 / 450卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
pulsed electron deposition technique; electron-doped Nd1.85Ce0.15CuO4 film;
D O I：
10.1016/j.physc.2006.08.017
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nd1.85Ce0.15CuO4-delta superconducting thin films were prepared on (100) SrTiO3 substrates by pulsed electron deposition technique without reducing atmosphere. Oxygen content is finely controlled by high temperature vacuum annealing, and optimal superconductivity has been obtained. The deposition conditions of the film are discussed in details. Higher deposition temperature and lower gas pressure result in the loss of copper and the appearance of the foreign phase Ce0.5Nd0.5O1.75. High quality Nd1.85Ce0.15CuO4-delta epitaxial films are deposited at 840-870 degrees C in the mixed gas with a ratio of O-2:Ar = 1:3. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：96 / 100
页数：5
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