Preparation and characterization of graphene-structure GeSe2 nano-films by CVD

被引：3
|
作者：
Chen, Qing [1 ]
Wang, Yu-hua [2 ]
Li, Pei-ling [2 ]
Zhang, Yu-xi [2 ]
Jiang, Zhao-hua [3 ]
机构：
[1] Huazhong Univ Sci & Technol, Union Hosp, Tongji Med Coll, Dept Hepatobiliary Surg, Wuhan, Hubei, Peoples R China
[2] Wuhan Univ Sci & Technol, Hubei Prov Key Lab Syst Sci Met Proc, Wuhan 430081, Hubei, Peoples R China
[3] Shanghai Jiao Tong Univ, Shanghai Peoples Hosp 9, Dept Plast & Reconstruct Surg, Sch Med, Shanghai 200011, Peoples R China
来源：
SURFACE ENGINEERING | 2020年 / 36卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Composite materials; GeSe2; NFMs; CVD; Nano-films; Graphene-structure materials; SEM; Light-sensitive materials;
D O I：
10.1080/02670844.2019.1678941
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Graphene-structure GeSe2 nano-films (NFMs) were prepared by chemical vapour deposition. The synthesized GeSe2 NFMs were characterized by using various techniques such as SEM and XRD. Our work provides a simple and effective method to prepare GeSe2 NFMs. The GeSe2 NFM prepared by chemical vapour deposition has good uniformity and compactness, which provides a new process route for the preparation of GeSe2 NFM.
引用
收藏
页码：765 / 769
页数：5
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