Design of multi-finger HBT's with a thermal-electrical model

被引：0
|
作者：
Chang, YH [1 ]
Chang-Chiang, CC [1 ]
Lee, YC [1 ]
Liu, CC [1 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Tou Liu 64045, Yun Lin, Taiwan
来源：
2002 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 2002年
关键词：
HBT; multi-finger; thermal effect;
D O I：
10.1109/HKEDM.2002.1029165
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature distribution on the emitter fingers of heterojunction bipolar transistors (HBT's) is studied with a three-dimensional thermal-electrical model. Using this model, multi-finger HBT's is designed with non-uniform spacing. An efficient design procedure is presented. Te calculated results show significant temperature reduction on non-uniform spacing devices.
引用
下载
收藏
页码：95 / 98
页数：4
相关论文
共 50 条
  • [21] Optical system design of multi-finger fingerprint scanner
    Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
    不详
    不详
    Guangxue Jingmi Gongcheng, 2006, 6 (955-958):
  • [22] The Design and Evaluation of Multi-Finger Mouse Emulation Techniques
    Matejka, Justin
    Grossman, Tovi
    Lo, Jessica
    Fitzmaurice, George
    CHI2009: PROCEEDINGS OF THE 27TH ANNUAL CHI CONFERENCE ON HUMAN FACTORS IN COMPUTING SYSTEMS, VOLS 1-4, 2009, : 1073 - 1082
  • [23] Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors
    金冬月
    张万荣
    陈亮
    付强
    肖盈
    王任卿
    赵昕
    Chinese Physics B, 2011, 20 (06) : 281 - 286
  • [24] Scalable Thermal Resistance Model for single and multi-finger Silicon-on-Insulator MOSFETs
    Khandelwal, S.
    Watts, J.
    Tamilmani, E.
    Wagner, L.
    2011 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2011,
  • [25] ThermoSurf: Thermal Display Technology for Dynamic and Multi-Finger Interactions
    Peters, Luka
    Serhat, Gokhan
    Vardar, Yasemin
    IEEE ACCESS, 2023, 11 : 12004 - 12014
  • [26] Thermal Analysis of High-Power Multi-Finger FET
    Timofeyev, Vladimir
    Semenovskaya, Elena
    Faleeva, Elena
    2015 IEEE 35TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO), 2015, : 239 - 241
  • [27] Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs
    Mueller, Markus
    Nardmann, Tobias
    Froitzheim, Maximilian
    Schroeter, Michael
    2022 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2022, : 208 - 211
  • [28] Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures
    Chen Yanhu
    Shen Huajun
    Liu Xinyu
    Xu Hui
    Li Ling
    Li Huijun
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (10)
  • [29] Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures
    陈延湖
    申华军
    刘新宇
    徐辉
    李玲
    李惠军
    Journal of Semiconductors, 2010, (10) : 28 - 31
  • [30] Electrical characterization of InGaAs/InAlAs/InP HEMT with multi-finger gate
    He, Lijun
    Zhao, Boyang
    He, Chengyun
    Xie, Zhiyang
    Zhang, Jinsha
    Chen, Weizhong
    MICROELECTRONICS JOURNAL, 2021, 118
12345