Mid-gap states measurements of low-level boron-doped a-Si:H films

被引：6

作者：

Theil, J ^{[1
]}

Lefforge, D ^{[1
]}

Kooi, G ^{[1
]}

Cao, M ^{[1
]}

Ray, GW ^{[1
]}

机构：

[1] Hewlett Packard Co, HP Labs, Palo Alto, CA 94304 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00847-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Previous measurements of the effects of low-level boron-doping on a-Si:H thin films indicated that the conductivity decreased as a function of boron concentration. This effect was reinvestigated in this work by measuring the leakage current of stacked p-i-n diodes as a function of boron concentration. The supporting measurements employed films deposited onto insulating substrates. The diodes were also examined by a charge recovery measurement to measure the dangling-bond density of states (DOS) near between 0.7 and 1.0 eV from the conduction band edge. The spectrum shows a broad band with a peak at 0.88 eV, which increases as a function of the boron concentration, but does not shift with respect to energy. The dangling-bond density increase is proportional to the B2H6/SiH4 gas how ratio, but not linear with respect to boron concentration in the film. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：569 / 573

页数：5

共 50 条

[21] The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)
Khelifati, N.
Tata, S.
Rahal, A.
Cherfi, R.
Fedala, A.
Kechouane, M.
Mohammed-Brahim, T.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 679 - 682
[22] Effects of hydrogen partial pressure on boron-doped hydrogenated amorphous silicon (a-Si:H(B)) properties
Khelifati, N.
Cherfi, R.
Keffous, A.
Rahal, A.
Kechouane, M.
THIN FILMS AND POROUS MATERIALS, 2009, 609 : 81 - +
[23] BORON DOPED A-SI - H-FILMS PREPARED BY ECR PLASMA ENHANCED CVD
YAMAMOTO, H
HINE, S
YAMAKAWA, S
TSUBOUCHI, N
DENKI KAGAKU, 1988, 56 (07): : 516 - 520
[24] ANOMALOUS STAEBLER-WRONSKI EFFECT IN BORON-DOPED A-SI-H FILMS
KUROVA, IA
MOCHALOVA, DA
LUPACHEVA, AN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (03): : 359 - 360
[25] Relaxation of light-induced metastable state of boron-doped p-type a-Si:H
A. G. Kazanskii
E. V. Larina
Semiconductors, 1998, 32 : 105 - 108
[26] Relaxation of light-induced metastable state of boron-doped p-type a-Si:H
Kazanskii, AG
Larina, EV
SEMICONDUCTORS, 1998, 32 (01) : 105 - 108
[27] Fabrication of silicon heterojunction solar cells with a boron-doped a-Si:H layer formed by catalytic impurity doping
Akiyama, Katsuya
Ohdaira, Keisuke
AIP ADVANCES, 2019, 9 (11)
[28] Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells
Zeng, Xiangbin
Wen, Xixing
Sun, Xiaohu
Liao, Wugang
Wen, Yangyang
THIN SOLID FILMS, 2016, 605 : 257 - 262
[29] DEPENDENCE OF RECOMBINATION IN PROTOCRYSTALLINE A-SI:H FILMS AND CELLS ON THEIR DIFFERENT LIGHT INDUCED GAP STATES
Wronski, C.
Deng, J.
Niu, X.
Smets, A. H. M.
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010,
[30] TIME-OF-FLIGHT MEASUREMENT OF HOLE TRANSPORT IN LIGHTLY BORON-DOPED A-SI-H FILMS
SHIRAKAWA, K
SHIRAFUJI, J
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 88 (2-3) : 171 - 181

← 1 2 3 4 5 →