Self-buffered BaxSr1-xTiO3 films by sol-gel and RF magnetron sputtering method

被引：4

作者：

Zhang, WX ^{[1
]}

Xu, ZY ^{[1
]}

Wang, CA ^{[1
]}

Zhao, BF ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2003年 / 38卷 / 01期

关键词：

ferroelectricity; thin films; sol-gel chemistry; sputtering; dielectric properties;

D O I：

10.1016/S0025-5408(02)00981-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BaxSr1-xTiO3 (BST) films are fabricated by sol-gel and RF (radio frequency) magnetron sputtering method. A buffer layer with columnar grains by sol-gel method is introduced to improve the dielectric anomaly in BST films. We find that the presence of buffer layer can increase the differential dielectric constant against temperature in sol-gel derived BST films while not so with sputtered films. We explain this by an 'expanded layer thickness model' and an unstable crystallized surface, respectively. The obtained (depsilon/epsilon) dT is up to 6% around 11 degreesC by the sol-gel method. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：133 / 139

页数：7

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