Investigation of carrier streaming effect for the low spike fast IGBT turn-off

被引：0
|
作者：
Onozawa, Y. [1 ,2 ]
Otsuki, M.
Seki, Y.
机构：
[1] Fuji Elect Device Technol Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan
[2] Fuji Elect Adv Technol Co Ltd, Matsumoto, Nagano 3900821, Japan
来源：
PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2006年
关键词：
spike voltage; Turn-off di/dt control; excess carrier; swept-out current; collector injection efficiency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the investigation of the IGBT turn-off phenomena especially focused on the di/dt controlling in order to suppress the spike voltage. The design concepts for improvement of the trade-off relationship between the turn-off power dissipation and the spike voltage are represented. The new turn-off di/dt control method, the combination of the smaller gate resistance and the controlling the collector injection efficiency, has been able to realize about 30% reduction in the turn-off energy compared to the conventional method, under the condition of the same spike voltage.
引用
收藏
页码：173 / +
页数：2
相关论文
共 50 条
  • [31] Robustness test and failure analysis of IGBT modules during turn-off
    Urresti-Ibanez, J.
    Castellazzi, A.
    Piton, M.
    Rebollo, J.
    Mermet-Guyennet, M.
    Ciappa, M.
    MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1725 - 1729
  • [32] General expression for IGBT turn-off loss for switched mode operation
    Randall, Ronald H.
    Laprade, Alain
    Wood, Barry
    Electronic Engineering (London), 2000, 72 (879):
  • [33] A Novel 4H-SiC/Si Heterojunction IGBT Achieving Low Turn-Off Loss
    Wang, Erjun
    Tian, Xiaoli
    Lu, Jiang
    Wang, Xinhua
    Li, Chengzhan
    Bai, Yun
    Yang, Chengyue
    Tang, Yidan
    Liu, Xinyu
    ELECTRONICS, 2023, 12 (11)
  • [34] MINORITY-CARRIER CONTROL GATE TURN-OFF THYRISTOR
    SUGAWARA, F
    KIMURA, M
    SUNOHARA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 132 - 137
  • [35] TURN-OFF THYRISTOR WITH A MINORITY-CARRIER CONTROL GATE
    KIMURA, M
    SUGAWARA, F
    MIYAMOTO, T
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 149 - 151
  • [36] Investigation of Switching Behavior of an IGBT under Soft Turn-off in Application for Dual-Active Bridge Converters
    Ogawa, Eri
    Onozawa, Yuichi
    De Doncker, Rik W.
    2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), 2018, : 2768 - 2773
  • [37] Desaturated turn-off of low-saturation IGBTs with clamping method to reduce turn-off energy losses
    Nayampalli, Vishwas Acharya
    Eckel, Hans-Guenter
    2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE), 2022,
  • [38] Evaluation of the turn-off transient controllability for high-power IGBT modules
    Tan, Kun
    Ji, Bing
    Wang, Jun
    Deng, Wenjuan
    Li, Daohui
    Wang, Zhiqiang
    Liu, Zheng
    Cao, Wenping
    IET POWER ELECTRONICS, 2022, 15 (07) : 631 - 643
  • [39] Turn-off behaviour of high voltage NPT- and FS-IGBT
    Eckel, Hans-Guenter
    Fleisch, Karl
    2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5, 2008, : 48 - +
  • [40] Modeling of turn-OFF Transient Energy in IGBT Controlled Silicon PiN Diodes
    Jahdi, Saeed
    Alatise, Olayiwola
    Mawby, Phil
    2014 16TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'14-ECCE EUROPE), 2014,
12345