Electron beam lithography using a PMMA/P(MMA 8.5 MAA) bilayer for negative tone lift-off process

被引：10
|
作者：
Blanchard-Dionne, Andre-Pierre [1 ]
Meunier, Michel [1 ]
机构：
[1] Polytech Montreal, Dept Engn Phys, Montreal, PQ H3C 3A7, Canada
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2015年 / 33卷 / 06期
基金：
加拿大自然科学与工程研究理事会;
关键词：
RESOLUTION LIMITS; PMMA;
D O I：
10.1116/1.4935129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors demonstrate a high resolution lift off process for electron beam lithography using a PMMA/P(MMA 8.5 MAA) bilayer as negative tone resists. Fifty-nanometer features were achieved for metal deposition up to 100 nm thick. The process was tested on silicon substrates as well as indium tin oxide on glass transparent substrates in order to prove the applicability of the patterns for extraordinary optical transmission. (C) 2015 American Vacuum Society.
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页数：5
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