Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band

被引：34

作者：

Perez-Galacho, Diego ^{[1
]}

Baudot, Charles ^{[2
]}

Hirtzlin, Tifenn ^{[1
]}

Messaoudene, Sonia ^{[2
]}

Vulliet, Nathalie ^{[2
]}

Crozat, Paul ^{[1
]}

Boeuf, Frederic ^{[2
]}

Vivien, Laurent ^{[1
]}

Marris-Morini, Delphine ^{[1
]}

机构：

[1] Univ Paris 11, Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol,C2N Orsay, F-91405 Orsay, France

[2] ST Microelectron, 850 Rue Jean Monnet, F-38920 Crolles, France

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 10期

基金：

欧盟地平线“2020”;

关键词：

ELECTROOPTIC MODULATOR; PHOTONIC BICMOS; JUNCTIONS; NETWORKS; COMPACT; DRIVER;

D O I：

10.1364/OE.25.011217

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300mm platform is presented. The measured modulation efficiency (V-pi L-pi) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 V-pp, compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps. (C) 2017 Optical Society of America

引用

页码：11217 / 11222

页数：6

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