Carbon Nitride Supported Ultrafine Manganese Sulfide Based Nonvolatile Resistive Switching Device for Nibble-Sized Memory Application

被引:10
|
作者
Perla, Venkata K. [1 ]
Ghosh, Sarit K. [1 ]
Mallick, Kaushik [1 ]
机构
[1] Univ Johannesburg, Dept Chem Sci, ZA-2006 Auckland Pk, South Africa
关键词
manganese sulfide nanoparticles; asymmetric S type; resistive switching; nibble-sized device; Ohmic and Schottky emission mechanism; THIN-FILMS; NANOPARTICLES; TRANSITION; SYSTEM;
D O I
10.1021/acsaelm.0c00817
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-temperature in situ route has been employed for the synthesis of carbon nitride supported manganese sulfide nanoparticles (CNMS). The hybrid material was characterized using different analytical techniques. The electrical property of the CNMS-based device demonstrated the resistive switching behavior with asymmetric S-type bipolar characteristics. The device exhibited the SET and RESET processes at +2.7 and -3.5 V, respectively, with the on-off ratio of similar to 10(3). The endurance and data retention studies were conducted for 10(3) cycles and 10(3) s, respectively, and the device revealed excellent stability with a constant on-off ratio. In this study, we also have demonstrated a nibble-sized device, made with CNMS, successfully processed, stored, and recovered the information in a binary form.
引用
收藏
页码:3987 / 3993
页数:7
相关论文
共 43 条
  • [41] Role of Carbon Nitride on the Resistive Switching Behavior of a Silver Stannate Based Device: An Approach to Design a Logic Gate Using the CMOS-Memristor Hybrid System
    Perla, Venkata K.
    Ghosh, Sarit K.
    Mallick, Kaushik
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (03) : 1620 - 1627
  • [42] Multilevel resistive switching in hydrothermally synthesized FeWO4 thin film-based memristive device for non-volatile memory application
    Patil, Amitkumar R.
    Dongale, Tukaram D.
    Pedanekar, Rupesh S.
    Sutar, Santosh S.
    Kamat, Rajanish K.
    Rajpure, Keshav Y.
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2024, 669 : 444 - 457
  • [43] Organic-inorganic FAPbBr3 perovskite based flexible optoelectronic memory device for light-induced multi level resistive switching application
    Siddik, Abubakkar
    Haldar, Prabir Kumar
    Das, Ujjal
    Roy, Asim
    Sarkar, Pranab Kumar
    MATERIALS CHEMISTRY AND PHYSICS, 2023, 297