Reliability and low-frequency noise measurements of InGaAsP MQW buried-heterostructure lasers

被引:0
|
作者
Pralgauskaite, S [1 ]
Matukas, J [1 ]
Palenskis, V [1 ]
Sermuksnis, E [1 ]
Vysniauskas, J [1 ]
Letal, G [1 ]
Mallard, R [1 ]
Smetona, S [1 ]
机构
[1] Inst Semicond Phys, Vilnius, Lithuania
来源
MIKON-2002: XIV INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS, VOLS 1-3, PROCEEDINGS | 2002年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A laser diode reliability test based on the measurements of the low-frequency optical and electrical noise, and their correlation factor changes during short-time ageing is presented. The noise characteristics reveal obvious differences between the stable and unreliable lasers operated near the threshold region. An excessive Lorentzian type noise with negative correlation factor at the threshold could be one of criteria for identifying unreliable lasers. The behaviour of unreliable lasers during ageing could be explained by migration of point recombination centres at the interface of an active layer, and by the formation of defect clusters.
引用
收藏
页码:588 / 591
页数:4
相关论文
共 50 条
  • [21] CRITERION FOR IMPROVED LINEARITY OF 1.3-MU-M INGAASP INP BURIED-HETEROSTRUCTURE LASERS
    DUTTA, NK
    NELSON, RJ
    WRIGHT, PD
    CRAFT, DC
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (02) : 160 - 164
  • [22] 2-DIMENSIONAL SIMULATION OF CONSTRICTED-MESA INGAASP/INP BURIED-HETEROSTRUCTURE LASERS
    GAULT, M
    MAWBY, P
    ADAMS, AR
    TOWERS, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (08) : 1691 - 1700
  • [23] RELIABILITY OF INGAASP/INP BURIED HETEROSTRUCTURE 1.3-MU-M LASERS
    MIZUISHI, K
    SAWAI, M
    TODOROKI, S
    TSUJI, S
    HIRAO, M
    NAKAMURA, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1294 - 1301
  • [24] LOW THRESHOLD AND LOW DISPERSION MOCVD LPE BURIED-HETEROSTRUCTURE GAAS/GAALAS LASERS
    BRILLOUET, F
    RIOU, J
    TROTTE, M
    AZOULAY, R
    DUGRAND, L
    ELECTRONICS LETTERS, 1984, 20 (21) : 857 - 859
  • [25] BURIED-HETEROSTRUCTURE LASERS FABRICATED BY INSITU PROCESSING TECHNIQUES
    WANG, YL
    TEMKIN, H
    HARRIOTT, LR
    LOGAN, RA
    TANBUNEK, T
    APPLIED PHYSICS LETTERS, 1990, 57 (18) : 1864 - 1866
  • [26] HIGHLY EFFICIENT (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH BURIED OPTICAL GUIDE
    CHINONE, N
    SAITO, K
    ITO, R
    AIKI, K
    SHIGE, N
    APPLIED PHYSICS LETTERS, 1979, 35 (07) : 513 - 516
  • [27] 1.3-μm AlGaInAs buried-heterostructure lasers
    Takemasa, K
    Kubota, M
    Munakata, T
    Wada, H
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) : 949 - 951
  • [28] LOW-THRESHOLD INGAASP/INP 1.3-MUM DOUBLY BURIED-HETEROSTRUCTURE LASERS WITH A REACTIVE-ION-ETCHED FACET
    SAITO, H
    NOGUCHI, Y
    NAGAI, H
    ELECTRONICS LETTERS, 1986, 22 (01) : 36 - 38
  • [29] INGAASP-INP BURIED-HETEROSTRUCTURE LASERS (LAMBDA=1.5-MU-M) WITH CHEMICALLY ETCHED MIRRORS
    ADACHI, S
    KAWAGUCHI, H
    TAKAHEI, K
    NOGUCHI, Y
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5843 - 5845
  • [30] PECULIARITIES OF CATASTROPHIC OPTICAL-DAMAGE IN SINGLE-QUANTUM-WELL INGAASP/INGAP BURIED-HETEROSTRUCTURE LASERS
    YOO, JS
    LEE, SH
    PARK, GT
    KO, YT
    KIM, T
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1840 - 1842