Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature

被引：2

作者：

Do, Quyen ^{[1
]}

Manh, Nguyen The ^{[1
]}

Triet, Luong Nguyen Dai ^{[1
]}

Choi, Yura ^{[1
]}

Lee, Young-Woo ^{[1
]}

Cho, Yonghyun ^{[1
]}

Lee, Kwang Jae ^{[2
]}

Cho, Namchul ^{[1
]}

机构：

[1] Soonchunhyang Univ, Dept Energy Syst Engn, Asan 31538, Chungcheongnam, South Korea

[2] King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn, Thuwal, Saudi Arabia

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2020年 / 707卷 / 01期

关键词：

Absorber layers; CISSe; controlling morphology; thin-film solar; CUINSE2; THIN-FILMS; SOLAR-CELLS; LIGHT-ABSORPTION; OPTICAL-PROPERTIES; TERNARY; SELENIZATION; SCATTERING; GA; CU;

D O I：

10.1080/15421406.2020.1743464

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.

引用

页码：126 / 139

页数：14

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