Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature

被引：2

作者：

Do, Quyen ^{[1
]}

Manh, Nguyen The ^{[1
]}

Triet, Luong Nguyen Dai ^{[1
]}

Choi, Yura ^{[1
]}

Lee, Young-Woo ^{[1
]}

Cho, Yonghyun ^{[1
]}

Lee, Kwang Jae ^{[2
]}

Cho, Namchul ^{[1
]}

机构：

[1] Soonchunhyang Univ, Dept Energy Syst Engn, Asan 31538, Chungcheongnam, South Korea

[2] King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn, Thuwal, Saudi Arabia

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2020年 / 707卷 / 01期

关键词：

Absorber layers; CISSe; controlling morphology; thin-film solar; CUINSE2; THIN-FILMS; SOLAR-CELLS; LIGHT-ABSORPTION; OPTICAL-PROPERTIES; TERNARY; SELENIZATION; SCATTERING; GA; CU;

D O I：

10.1080/15421406.2020.1743464

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.

引用

页码：126 / 139

页数：14

共 50 条

[1] Solution-processed CuIn(S, Se)2 absorber layers for application in thin film solar cells
Arnou, Panagiota
Cooper, Carl S.
Malkov, Andrei V.
Bowers, Jake W.
Walls, John M.
THIN SOLID FILMS, 2015, 582 : 31 - 34
[2] Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
Hwang, Sooyeon
Lee, Ju Ho
Woo, Chang Ho
Lee, Jeong Yong
Cho, Hyung Koun
THIN SOLID FILMS, 2011, 519 (15) : 5146 - 5149
[3] Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin film
Zhang Shi-Yu
Yu Zhi-Nong
Cheng Jin
Wu De-Long
Li Xu-Yang
Xue Wei
ACTA PHYSICA SINICA, 2016, 65 (12)
[4] Morphology Evolution and Structural Transformation of Solution-Processed Methanofullerene Thin Film under Thermal Annealing
Zheng, Lidong
Liu, Jiangang
Ding, Yan
Han, Yanchun
JOURNAL OF PHYSICAL CHEMISTRY B, 2011, 115 (25): : 8071 - 8077
[5] Film morphology and thin film transistor performance of solution-processed oligothiophenes
Chang, PC
Lee, J
Huang, D
Subramanian, V
Murphy, AR
Frechet, JMJ
CHEMISTRY OF MATERIALS, 2004, 16 (23) : 4783 - 4789
[6] Influence of annealing temperatures on solution-processed AlInZnO thin film transistors
Gao, Yana
Lu, Jianguo
Zhang, Jianhua
Li, Xifeng
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 646 : 675 - 679
[7] Improved Thin-Film Transistor Performance of Low-Temperature, Solution-Processed Indium Oxide by Controlling Solution Temperature
Kang, Chan-Mo
Ryu, Jin Hwa
Kim, Hoon
Oh, Yeon-Wha
Baek, Kyu-Ha
Do, Lee-Mi
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (08) : 8473 - 8477
[8] Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing
Zhang, Qian
Xia, Guodong
Li, Hangyu
Sun, Qiang
Gong, Hongyu
Wang, Sumei
NANOTECHNOLOGY, 2024, 35 (12)
[9] Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors
Yoon, Doo Hyun
Lim, Hyun Soo
Kim, Si Joon
Jung, Joohye
Kim, Hyun Jae
IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2, 2012, 19 : 871 - 874
[10] Influence of antimony dopant on CuIn(S,Se)2 solar thin absorber layer deposited via solution-processed route
Mazalan, Elham
Chaudhary, Kashif Tufail
Nayan, Nafarizal
Ali, Jalil
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 772 : 710 - 718

← 1 2 3 4 5 →