Highly Conductive p-Type Zinc blende SiC Thin Films Fabricated on Silicon Substrates by Magnetron Sputtering

被引：2

作者：

Kim, Kwang Joo ^{[1
]}

Kim, Min Hwan ^{[1
]}

Kim, Young-Wook ^{[2
]}

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[2] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul 130743, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 12期

关键词：

TEMPERATURE-DEPENDENCE; ELECTRICAL-RESISTIVITY; ALUMINUM NITRIDE; NATIVE DEFECTS; CARBIDE;

D O I：

10.1111/jace.13988

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Polycrystalline silicon carbide (SiC) thin films were fabricated on Si(100) substrates using radio-frequency magnetron sputtering followed by annealing at 1300 degrees C in an Ar atmosphere. The SiC films exhibited a zinc blende structure with planar and point defects as detected by X-ray diffraction and Raman spectroscopy. The SiC films were p-type conductive with electrical resistivity as low as 2.8 3 10(-3) Omega.cm at room temperature. The p-type character of the SiC films can be explained in terms of the Si vacancies in the C-rich environment as evidenced by Raman spectroscopy.

引用

页码：3663 / 3665

页数：3

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