Growth of ZnO crystal on sapphire and nitridated sapphire substrates at 1000 °C by halide vapor phase epitaxy

被引：2

作者：

Yoshii, Naoki ^{[1
]}

Fujii, Tetsuo ^{[2
,3
]}

Masuda, Rui ^{[2
]}

Hosaka, Shigetoshi ^{[1
]}

Kamisawa, Akira ^{[3
]}

Kumagai, Yoshinao ^{[2
]}

Koukitu, Akinori ^{[2
]}

机构：

[1] Tokyo Electron Ltd, Technol Dev Ctr, Nirasaki, Yamanashi 4070192, Japan

[2] Tokyo Univ Agr & Technol, Dept Appl Chem, Grad Sch Engn, Koganei, Tokyo 1848588, Japan

[3] ROHM Co Ltd, Res & Dev Headquarters, Ukyo Ku, Kyoto 6158585, Japan

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 01期

关键词：

ZnO; Crystal growth; Crystal structure; Surfaces; Vapor phase epitaxy; MOLECULAR-BEAM EPITAXY; THIN-FILMS; ROOM-TEMPERATURE;

D O I：

10.1016/j.matlet.2009.09.060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a halide vapor phase epitaxy (HVPE) technique in which the starting materials are ZnCl(2) generated by the reaction between high purity Zn metal (7 N grade) and Cl(2) gas, and H(2)O, ZnO crystals have been grown at a high temperature of 1000 degrees C on sapphire substrates with and without surface nitridation treatment. It was found that the nitridation treatment resulted in a change of the (11 (2) over bar0) sapphire surface to a (0001) AlN structure, leading to two possible sets of orientations for (0001) ZnO crystals. In addition, the nitridation treatment leads to a smaller average ZnO grain size and a higher density of nuclei. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：25 / 27

页数：3

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