Resonant tunneling transport through GaAs/AlGaAs superlattices in strong tilted magnetic field

被引：4
|
作者：
Telenkov, M. P. [1 ]
Mityagin, Yu. A. [1 ]
机构：
[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
来源：
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2006年 / 103卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063776106090123
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An analysis is presented of the transverse resonant tunneling transport through GaAs/AlGaAs superlattices due to tunneling between Landau levels in quantum wells in a strong tilted magnetic field. A high tunneling rate is demonstrated between Landau levels with Delta n not equal 0 in a magnetic field with a nonzero in-plane component. This leads to substantial broadening and shift of the tunneling resonance and significant changes in the current-voltage characteristics of superlattices. The predicted behavior of the current-voltage characteristics of superlattices in tilted magnetic fields is demonstrated experimentally.
引用
收藏
页码：428 / 435
页数：8
相关论文
共 50 条
  • [31] OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES
    NAKAGAWA, T
    IMAMOTO, H
    KOJIMA, T
    OHTA, K
    APPLIED PHYSICS LETTERS, 1986, 49 (02) : 73 - 75
  • [32] RESONANT TUNNELING IN GAAS/ALGAAS DOUBLE QUANTUM-WELLS
    EISENSTEIN, JP
    GRAMILA, TJ
    PFEIFFER, LN
    WEST, KW
    SURFACE SCIENCE, 1992, 267 (1-3) : 377 - 382
  • [33] Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors
    Son, S. H.
    Kang, M. G.
    Hwang, S. W.
    Lee, J. I.
    Park, Y. J.
    Yu, Y. S.
    Ahn, D.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 2160 - 2162
  • [34] Photoluminescence with moderate excitation and resonant Raman scattering in GaAs/AlGaAs superlattices
    Aleshchenko, YA
    Zavaritskaya, TN
    Kapaev, VV
    Kopaev, YV
    Melnik, NN
    SEMICONDUCTORS, 1996, 30 (05) : 436 - 439
  • [35] SELECTION-RULE BREAKDOWN IN COHERENT RESONANT TUNNELING IN A TILTED MAGNETIC-FIELD
    GOBATO, YG
    BERROIR, JM
    GULDNER, Y
    VIEREN, JP
    CHEVOIR, F
    VINTER, B
    PHYSICAL REVIEW B, 1991, 44 (24): : 13795 - 13798
  • [36] SEQUENTIAL RESONANT TUNNELING OF HOLES IN GAAS-ALAS SUPERLATTICES
    SCHNEIDER, H
    GRAHN, HT
    VONKLITZING, K
    PLOOG, K
    PHYSICAL REVIEW B, 1989, 40 (14): : 10040 - 10043
  • [37] RESONANT-TUNNELING IN CROSSED ELECTRIC AND MAGNETIC-FIELDS IN GAAS-ALAS SUPERLATTICES
    MULLER, W
    GRAHN, HT
    VONKLITZING, K
    PLOOG, K
    PHYSICAL REVIEW B, 1993, 48 (15): : 11176 - 11183
  • [38] Synchronization and chaos induced by resonant tunneling in GaAs/AlAs superlattices
    Zhang, YH
    Kastrup, J
    Klann, R
    Ploog, KH
    PHYSICAL REVIEW LETTERS, 1996, 77 (14) : 3001 - 3004
  • [39] Evidence of Γ-X sequential resonant tunneling in GaAs/AlAs superlattices
    Appl Phys Lett, 4 (520):
  • [40] Photoluminescence characterization of resonant-tunneling diodes based on the GaAs/AlGaAs long-period superlattices in the process of fabrication
    Belov, AA
    Efimov, YA
    Karuzskii, AL
    Kazakov, IP
    Mityagin, YA
    Murzin, VN
    Perestoronin, AV
    Pishchulin, AA
    Shmelev, SS
    MICRO- AND NANOELECTRONICS 2003, 2004, 5401 : 579 - 589
12345