Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures

被引：5
|
作者：
Inoue, M
Sugihara, T
Maemoto, T
Sasa, S
Dobashi, H
Izumiya, S
机构：
[1] Department of Electrical Engineering, Osaka Institute of Technology, Asahi-ku-, Ohmiya
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 21卷 / 01期
关键词：
InAs; 1D transport; weak links;
D O I：
10.1006/spmi.1996.0170
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the successful fabrication and electrical transport properties of single quantum wires fabricated by using InAs/AlGaSb heterostructures. Magnetotransport and high electric field characteristics have been measured on the various size of quantum wires. From comparison with the channel length-dependence of I-V characteristics of the differ ent size quantum wires, we try to develop a comprehensive understanding on the quasi-one dimensional electron transport in InAs from the nearly ballistic regime to the hot electron condition. The fabrication and characteristics of superconducting weak link InAs/Pb:In devices are also reported. The modulation of differential conductivity has been observed by the gate bias voltage between the superconducting Pb-In contacts. (C) 1997 Academic Press Limited
引用
收藏
页码：69 / 76
页数：8
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