Quasi-one-dimensional electron transport in InAs mesoscopic devices

被引：1

作者：

Maemoto, T ^{[1
]}

Inoue, M ^{[1
]}

Sasa, S ^{[1
]}

Ichiu, M ^{[1
]}

Anziki, K ^{[1
]}

Nakayama, K ^{[1
]}

机构：

[1] Osaka Inst Technol, New Mat Res Ctr, Asahi Ku, Osaka 5358585, Japan

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 47卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00178-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Decent demonstrations of InAs quantum wire transistors (QWTs) are reported. Quasi-one-dimensional (1D) electron transport properties are discussed from analyses of FET characteristics measured on the different size QWTs.

引用

页码：159 / 161

页数：3

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