Performance of RF MEMS switches at low temperatures

被引：11
|
作者：
Su, H. T.
Llamas-Garro, I.
Lancaster, M. J.
Prest, M.
Park, J. -H.
Kim, J. -M.
Back, C. -W
Kim, Y. -K.
机构：
[1] Univ Birmingham, Sch Elect Elect & Comp Engn, Birmingham B15 2TT, W Midlands, England
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 137724, South Korea
[3] LG Elect Inst Technol, Seoul 137724, South Korea
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 21期
关键词：
D O I：
10.1049/el:20062551
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.
引用
收藏
页码：1219 / 1221
页数：3
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