Insulating ground state of Sn/Si(111)-(√3x√3)R30°

被引：69
|
作者：
Modesti, S.
Petaccia, L.
Ceballos, G.
Vobornik, I.
Panaccione, G.
Rossi, G.
Ottaviano, L.
Larciprete, R.
Lizzit, S.
Goldoni, A.
机构：
[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[2] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy
[3] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy
[4] Univ Modena, INFM, Dipartimento Fis, I-41100 Modena, Italy
[5] Univ Aquila, I-67010 Coppito, Italy
[6] CNR, Ist Sistemi Complessi, I-00016 Monterotondo Roma, Italy
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.98.126401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The Sn/Si(111)-(root 3 x root 3) R30 degrees surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)].
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页数：4
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