Modeling and simulation of the lag effect in a deep reactive ion etching process

被引：26
|
作者：
Tan, Yiyong [1 ]
Zhou, Rongchun
Zhang, Haixia
Lu, Guizhang
Li, Zhihong
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Nankai Univ, Inst Robot & Automat Informat, Tianjin 300071, Peoples R China
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2006年 / 16卷 / 12期
关键词：
D O I：
10.1088/0960-1317/16/12/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents research on modeling and simulation of the lag effect, which is one of the most important effects in a deep reactive ion etching (DRIE) process. From theoretical analysis and experimental investigation of the lag effect, it has been found that the shielding effect and flow change of reactive ions are two dominant factors. Based on our previous work on DRIE modeling, a modified model considering these two lag effect factors has been established, and a 2D DRIE simulator is developed according to this model. The simulation results were in good agreement with experiments.
引用
收藏
页码：2570 / 2575
页数：6
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