Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure

被引：2

作者：

Lalinsky, T. ^{[1
]}

Ryger, I. ^{[1
]}

Rufer, L. ^{[2
]}

Vanko, G. ^{[1
]}

Hascik, S. ^{[1
]}

Mozolova, Z. ^{[1
]}

Tomaska, M. ^{[3
]}

Vincze, A. ^{[4
]}

Uherek, F. ^{[4
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[2] UJF, G INP, CNRS, TIMA Lab, F-38031 Grenoble, France

[3] Slovak Tech Univ Bratislava, Fac Elect Engn & Informat Technol, Dept Microelect, Bratislava 81219, Slovakia

[4] Ctr Int Laser, Bratislava 81219, Slovakia

来源：

VACUUM | 2009年 / 84卷 / 01期

关键词：

AlGaN/GaN; SAW; IDT; HEMT; SF6 plasma treatment; SIMS analysis; SAPPHIRE; DEVICES;

D O I：

10.1016/j.vacuum.2009.05.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we introduce a new modified approach to the formation of interdigital transducer (IDT) structures on an AlGaN/GaN heterostructure. The approach is based on a shallow recess-gate plasma etching of the AlGaN barrier layer in combination with "in-situ" SF6 surface plasma treatment applied selectively under the Schottky gate fingers of IDTs. It enables one to modify the two-dimensional electron gas (2DEG) density and the surface field distribution in the region of the IDTs, as is needed for the excitation of a surface acoustic wave (SAW). The measured transfer characteristics of the plasma-treated SAW structures revealed the excitation of SAW at zero bias voltage due to fully depleted 2DEG in the region of the IDTs. High external bias voltages are not necessary for SAW excitation. SIMS depth distribution profiles of F atoms were measured to discuss the impact of SF6 Plasma treatment on the performance of the AlGaN/GaN-based IDTs. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：231 / 234

页数：4

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