AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors

被引：16

作者：

Lalinsky, T. ^{[1
]}

Rufer, L. ^{[2
]}

Vanko, G. ^{[1
]}

Mir, S. ^{[2
]}

Hascik, S. ^{[1
]}

Mozolova, Z. ^{[1
]}

Vincze, A. ^{[3
]}

Uherek, F. ^{[3
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[2] TIMA Lab, F-38031 Grenoble, France

[3] Ctr Int Laser, Bratislava 81219, Slovakia

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 03期

关键词：

GaN; AlGaN; SAW; Plasma;

D O I：

10.1016/j.apsusc.2008.07.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a new approach in forming of interdigital surface acoustic wave-structures on AlGaN/GaN heterostructure to be applied in chemical sensors technology. This approach uses a selective self-aligned SF6 plasma treatment of the AlGaN/GaN barrier layer to modify 2DEG density and surface field distribution in the range of interdigital transducers (IDTs) thus enabling SAW excitation. Secondary ion mass spectroscopy was applied to explain the modification of 2DEG density in the plasma treated AlGaN/GaN heterostructure. The initial results in the process technology and characterization are presented. (c) 2008 Elsevier B.V All rights reserved.

引用

页码：712 / 714

页数：3

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