22nm CMOS Approaches by PVD TiN or Ti-Silicide as Metal Gate

被引：1
|
作者：
Liu, C. S. [1 ]
Boccardi, G. [2 ]
Wang, H. Y. [1 ]
Lin, C. T. [1 ]
Petry, J. [2 ]
Mueller, M. [2 ]
Li, Z. [3 ]
Zhao, C. [3 ]
Yu, C. H. [1 ]
机构：
[1] TSMC, 8,Li Hsin Rd 6,Hsinchu Sci Pk, Hsinchu 30077, Taiwan
[2] NXP TSMC Res Ctr, Eindhoven, Netherlands
[3] IMEC, Leuven, Belgium
来源：
PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS | 2009年
关键词：
D O I：
10.1109/VTSA.2009.5159292
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：63 / +
页数：2
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