Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements

被引:135
|
作者
Silly, M. G.
Jaffrennou, P.
Barjon, J.
Lauret, J. -S.
Ducastelle, F.
Loiseau, A.
Obraztsova, E.
Attal-Tretout, B.
Rosencher, E.
机构
[1] Off Natl Etud & Rech Aerosp, CNRS, Lab Etud Microstruct, F-92322 Chatillon, France
[2] Off Natl Etud & Rech Aerosp, Dept Mesures Phys, F-91761 Palaiseau, France
[3] Univ Versailles, Grp Etud Mat Condensee, CNRS Bellevue, F-92195 Meudon, France
[4] Ecole Normale Super, Inst Alembert, Lab Photon Quant & Mol, F-94235 Cachan, France
[5] Russian Acad Sci, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
关键词
D O I
10.1103/PhysRevB.75.085205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cathodoluminescence and photoluminescence spectroscopies have been performed on hexagonal boron nitride powders. The combination of these techniques allows us to analyze the two observed luminescence bands. A deep-level UV emission at about 4 eV is attributed to defects or impurities, and a near-band-gap UV emission is observed at about 5.5 eV. The deep-level band is composed of four peaks, which are attributed to phonon replica due to localized vibrations. In the near-band-gap region, six components are observed between 5.2 and 5.96 eV, in agreement with the recent experiments performed on h-BN single crystals by Watanabe [Nat. Mater. 3, 404 (2004)], but they are assigned here to Frenkel excitons.
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页数:5
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