Improved sheath model for the biased substrate in vacuum arc with cathode spots

被引：0
|
作者：
Cheng, ZY [1 ]
Zou, JY [1 ]
Yang, L [1 ]
Cheng, LC [1 ]
机构：
[1] HUAZHONG UNIV SCI & TECHNOL,DEPT ELECT ENGN,WUHAN 430074,HUBEI,PEOPLES R CHINA
来源：
ISDEIV - XVIITH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM, PROCEEDINGS, VOLS I AND II | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：863 / 866
页数：4
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