High efficiency deep blue phosphorescent organic light-emitting diodes using a double emissive layer structure
被引:6
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作者:
Lee, Jonghee
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机构:
Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South KoreaElect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South Korea
Lee, Jonghee
[1
]
Lee, Jeong-Ik
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机构:
Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South KoreaElect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South Korea
Lee, Jeong-Ik
[1
]
Lee, Jun Yeob
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机构:
Dankook Univ, Dept Polymer Sci & Engn, Yongin 448701, South KoreaElect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South Korea
Lee, Jun Yeob
[2
]
Chu, Hye Yong
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Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South KoreaElect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South Korea
Chu, Hye Yong
[1
]
机构:
[1] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305350, South Korea
[2] Dankook Univ, Dept Polymer Sci & Engn, Yongin 448701, South Korea
Organic light-emitting diodes (OLEDs);
Deep blue phosphorescent;
Double emissive layer structures (D-EMLs);
Quantum efficiency;
DEVICES;
ELECTROPHOSPHORESCENCE;
D O I:
10.1016/j.synthmet.2009.06.022
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
High efficiency deep blue phosphorescent organic light-emitting diodes (PHOLEDs) have been developed with a double emissive layer structure (D-EML). Using bis(4',6'-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6) as an electro-phosphorescent dopant, we achieved a maximum external quantum efficiency of 14.8% in the deep blue PHOLEDs with D-EMLs, which is 50% higher value than that of 9.76% with single emissive layer structure (S-EML). Moreover, the external quantum efficiency at high current density region of 10mA/cm(2) was maintained up to 11.3% in this D-EML device. We attributed this enhancement to the expansion of carrier recombination region and the effective confinement of exciton within the emissive layer. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
机构:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)
朱云柯
钟建
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机构:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)
钟建
雷疏影
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机构:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)
雷疏影
陈辉
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机构:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)
陈辉
邵双双
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State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)
邵双双
林宇
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机构:
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electron Science and Technology of China (UESTC)
机构:
Hoseo Univ, Dept Green Energy & Semicond Engn, Asan, South KoreaHoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
Yoo, Seung Il
Yoon, Ju-An
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Hoseo Univ, Dept Green Energy & Semicond Engn, Asan, South KoreaHoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
Yoon, Ju-An
Kim, Nam Ho
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Hoseo Univ, Dept Green Energy & Semicond Engn, Asan, South KoreaHoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
Kim, Nam Ho
Kim, Jin Wook
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机构:
Hoseo Univ, Dept Green Energy & Semicond Engn, Asan, South KoreaHoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
Kim, Jin Wook
Lee, Ho Won
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机构:
Hongik Univ, Dept Informat Display, Seoul 121791, South KoreaHoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
Lee, Ho Won
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Kim, Young Kwan
He, Gufeng
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机构:
Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200240, Peoples R ChinaHoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
He, Gufeng
Kim, Woo Young
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机构:
Hoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, CanadaHoseo Univ, Dept Green Energy & Semicond Engn, Asan, South Korea
机构:
NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, JapanNHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
Fukagawa, H.
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Watanabe, K.
Tsuzuki, T.
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NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, JapanNHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
Tsuzuki, T.
Tokito, S.
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NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, JapanNHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan