Analysis of the RC-IGBT snap-back phenomenon on the switching performance of parallel devices

被引：0

作者：

Rahimo, Munaf ^{[1
]}

Reigosa, Paula Diaz ^{[2
]}

Schulz, Nicola ^{[2
]}

Iannuzzo, Francesco ^{[3
]}

机构：

[1] MTAL GmbH, Gansbrunnen, Switzerland

[2] Univ Appl Sci Northwestern Switzerland FHNW, Windisch, Switzerland

[3] Aalborg Univ, Dept Energy Technol, Pontoppidanstr 111, Aalborg, Denmark

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

关键词：

Reverse Conducting IGBT; snap-back;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a simulation-based study is carried out with respect to the snap-back behavior in the output IV characteristics of reverse conducting RC-IGBTs. Half-cell TCAD models of 1200V RC-IGBT structures with different snap-back voltage levels were generated by varying the peak doping concentration of the punch-through N-buffer region. The effect of the snap-back characteristics on the switching behavior when devices are operating in parallel were studied under varying device and circuit conditions. Current mis-sharing between parallel RC-IGBTs was instigated and analyzed in order to identify the root cause of such behavior during the switching transients. Results show that the RC-IGBT snap-back voltage magnitude and variations along with the circuit and operating conditions play a critical role for determining if the device operates in a stable or un-stable mode.

引用

页码：482 / 485

页数：4

共 48 条

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