A defect map for degradation of InGaAsP/InP long wavelength laser diodes

被引：0
|
作者：
Chu, SNG [1 ]
Nakahara, S [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS | 1996年 / 421卷
关键词：
D O I：
10.1557/PROC-421-407
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：407 / 417
页数：11
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