Origin of n-type conductivity in nominally undoped InN

被引：9

作者：

Cimalla, V. ^{[1
]}

Lebedev, V. ^{[1
]}

Morales, F. M. ^{[1
]}

Niebelschuetz, M. ^{[1
]}

Ecke, G. ^{[1
]}

Goldhahn, R. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Inst Phys, D-98693 Ilmenau, Germany

来源：

MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK | 2006年 / 37卷 / 11期

关键词：

Indium Nitride; doping; electron concentration; surface accumulation; dislocation density;

D O I：

10.1002/mawe.200600082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of different contributions to the high electron concentration in state-of-the-art InN layers grown by molecular-beam epitaxy is investigated. Surface accumulation has a crucial influence for thin InN layers < 300 nm and superimposes the background concentration. For air-exposed InN it can be assigned to a surface near doping by oxygen. For InN layers in the micron range the density of dislocations is the major doping mechanism. Finally, point defects like vacancies and impurities have minor influence on the carrier concentration and would dominate the free electron concentration only for InN > 10 mu m.

引用

页码：924 / 928

页数：5

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