Direct imaging of photoconductivity of solar cells by using a near-field scanning microwave microprobe

被引：15
|
作者：
Hovsepyan, Artur [1 ,2 ]
Babajanyan, Arsen [1 ,2 ]
Sargsyan, Tigran [1 ,2 ]
Melikyan, Harutyun [1 ,2 ]
Kim, Seungwan [1 ,2 ]
Kim, Jongchel [1 ,2 ]
Lee, Kiejin [1 ,2 ]
Friedman, Barry [3 ]
机构：
[1] Sogang Univ, Dept Phys, Seoul 121742, South Korea
[2] Sogang Univ, Basic Sci Inst Cell Damage Control, Seoul 121742, South Korea
[3] Sam Houston State Univ, Dept Phys, Huntsville, TX 77341 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 11期
关键词：
microwave reflectometry; photoconductivity; photovoltaic effects; silicon; solar cells; RESISTANCE; MICROSCOPE; LIFETIME;
D O I：
10.1063/1.3259366
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A near-field scanning microwave microprobe (NSMM) technique has been used to investigate the photovoltaic effect in solar cells. As the photoconductivity of the n-type silicon layer in the solar cells was varied due to the incident light intensities and the wavelength, we could directly observe the photoconductivity changes inside the solar cells by measuring the change of reflection coefficient S-11 of the NSMM at an operating frequency near 4.1 GHz. We also directly imaged the photoconductivity changes by NSMM. Photoconductivity in solar cells is determined from the visualized microwave reflection coefficient changes at the interfaces with high sensitivity.
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页数：6
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