On the extraction of the threshold voltage of MOSFETs

被引：0
|
作者：
OrtizConde, A
Fernandes, EG
Liou, JJ
Hassan, MR
Sanchez, FJG
DeMercato, G
Wong, W
Castillo, OM
机构：
来源：
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method to extract the threshold voltage and the effective channel of MOSFETs, which is insensitive to the series resistances, is presented, This method, which is weakly dependent on the mobility model, is tested in the environments of a circuit simulator and measurements.
引用
收藏
页码：285 / 288
页数：4
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