gm/Id Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs With Nonlinear Behavior Above Threshold

被引：66

作者：

Flandre, Denis ^{[1
]}

Kilchytska, Valeria ^{[1
]}

Rudenko, Tamara ^{[2
]}

机构：

[1] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain, Belgium

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

关键词：

FinFET; modeling; MOSFETs; silicon-on-insulator technology; threshold voltage; ultrathin dielectrics; ultrathin silicon; PARAMETER EXTRACTION;

D O I：

10.1109/LED.2010.2055829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method is proposed for determining the threshold voltage in a MOSFET, based on the derivative of the g(m)/I-d ratio with respect to the gate voltage, which theoretically originates from the unified charge-control model similar to the capacitance-derivative method. This yields threshold voltages significantly less affected by gate-voltage-dependent mobility and series resistance than linear-extrapolation techniques. Moreover, it is more physically adequate in the case of advanced MOSFETs with ultrathin dielectrics, thin SOI body, or double gate operation, featuring a gradual transition from the exponential to linear charge control. The robustness of the method is experimentally verified on FinFETs with different lengths.

引用

页码：930 / 932

页数：3

共 50 条

[1] gm/ID-derivative Method for Threshold Voltage Extraction in Junctionless MOSFETs
Rudenko, T.
Nazarov, A.
Barraud, S.
Kilchytska, V.
Flandre, D.
[J]. 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,
[2] On the gm/ID-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs
Rudenko, T.
Arshad, M. K. Md
Raskin, J-P
Nazarov, A.
Flandre, D.
Kilchytska, V.
[J]. SOLID-STATE ELECTRONICS, 2014, 97 : 52 - 58
[3] On the extraction of the threshold voltage of MOSFETs
OrtizConde, A
Fernandes, EG
Liou, JJ
Hassan, MR
Sanchez, FJG
DeMercato, G
Wong, W
Castillo, OM
[J]. 1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 285 - 288
[4] Extraction of the threshold voltage of MOSFETs: an overview
Liou, JJ
Ortiz-Conde, A
Sanchez, FG
[J]. 1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1997, : 31 - 38
[5] A Simple Method for Extraction of Threshold Voltage of FD SOI MOSFETs
Gluszko, Grzegorz
Tomaszewski, Daniel
Malesinska, Jolanta
Kucharski, Krzysztof
[J]. MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013, 2013, : 101 - 105
[6] Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics
Sasic, Rajko M.
Lukic, Petar M.
Ramovic, Rifat M.
Ostojic, Stanko M.
[J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (09): : 2703 - 2708
[7] MODELING THE ANOMALOUS THRESHOLD VOLTAGE BEHAVIOR OF SUBMICROMETER MOSFETS
ARORA, ND
SHARMA, MS
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) : 92 - 94
[8] Threshold voltage definition and extraction for deep-submicron MOSFETs
Zhou, X
Lim, KY
Qian, W
[J]. SOLID-STATE ELECTRONICS, 2001, 45 (03) : 507 - 510
[9] Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve
Araujo Cunha, Ana Isabela
Pavanello, Marcelo Antonio
Trevisoli, Renan Doria
Galup-Montoro, Carlos
Schneider, Marcio Cherem
[J]. SOLID-STATE ELECTRONICS, 2011, 56 (01) : 89 - 94
[10] A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio
Rudenko, T.
Nazarov, A.
Barraud, S.
Kilchytska, V.
Flandre, D.
[J]. SOLID-STATE ELECTRONICS, 2020, 168

← 1 2 3 4 5 →