Depolarization current by a dipolar defect in semi-insulating GaAs

被引：0
|
作者：
Kim, HM [1 ]
Kim, JJ [1 ]
机构：
[1] Catholic Univ Taegu Hyosung, Dept Phys, Kyongsan 712702, Kyongbuk, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 2A期
关键词：
semi-insulating GaAs; TSDC; TSC; deep level defect; dielectric relaxation current;
D O I：
10.1143/JJAP.39.450
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To investigate the trap characteristic of native defects in a semi-insulating (SI) GaAs, the thermally stimulated depolarization current (TSDC) is compared with the thermally stimulated current (TSC). Beside several trap-limited current peaks, a significant TSDC peak with the activation energy of 0.40 eV is observed at 178 K. Dependence of the peak an the polarization voltage strongly suggests that this peak originates from the depolarization current fi om a dipolar defect in the SI GaAs.
引用
收藏
页码：450 / 451
页数：2
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