Magnetophonon resonance on the phonon frequency difference in quasi-free-standing graphene

被引:0
|
作者
Zak, D. [1 ]
Strupinski, W. [2 ]
Ciuk, T. [3 ]
Wojnarowska-Nowak, R. [1 ]
Sliz, P. [1 ]
Tomaka, G. [1 ]
Ploch, D. [1 ]
Sheregii, E. M. [1 ]
机构
[1] Univ Rzeszow, Ctr Microelect & Nanotechnol, 1 Pigonia Str, PL-35959 Rzeszow, Poland
[2] Warsaw Univ Technol, Phys Fac, Pl Politech 1, PL-00661 Warsaw, Poland
[3] Inst Elect Mat Technol, Lukasiewicz Res Network, Wolczynska 133, PL-01919 Warsaw, Poland
关键词
CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL GRAPHENE; ELECTRON-PHONON; OSCILLATIONS; LAYER;
D O I
10.1103/PhysRevB.103.035432
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structure of magnetoresistance curves as a function of magnetic field from 0 to 14 T at temperatures from 0.4 to 6.0 K for macroscopic samples of the quasi-free-standing (QFS) graphene monolayer on SiC substrate, are observed and analyzed, and also the spatial and depth frequency distribution of phonons have been measured using the micro-Raman spectroscopy (MRS). That one enables us to interpret the obtained resonance magnetoresistance curves based on the electron-phonon (e-p) interaction taking into account the actually observed phonon spectrum in researched samples: in the case of a linear e-p interaction the observation of the corresponding peaks on the R-xx(B) curves is difficult because an uninterrupted background is created. While nonlinear MPR with simultaneous G-phonon emission and D-phonon absorption occur in magnetic fields below 5 T against the background of MPR due to linear e-p interaction as well as Shubnikov-de Haas oscillations.
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页数:11
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