The Effects of Ag, Cu Compositions and Zn Doping on the Electromigration Performance of Pb-Free Solders

被引：3
|
作者：
Lu, Minhua [1 ]
Shih, Da-Yuan [1 ]
Lauro, Paul [1 ]
Kang, Sung [1 ]
Goldsmith, Charles [2 ]
Seo, Sun-Kyoung [3 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Microelectron, Hopewell Jct, NY 12533 USA
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejon, South Korea
来源：
2009 IEEE 59TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, VOLS 1-4 | 2009年
关键词：
D O I：
10.1109/ECTC.2009.5074123
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A systematic study of the effect of Ag, Cu and Zn alloying elements on the EM performance of Sn-rich Pb-free solder is reported. EM performance was found to strongly depend on the types of UBMs, alloying elements, compositions, and microstructures in solder. While leaded solders were found to be more robust than Pb-free solders, SnAg solders, in general has better EM performance than SnCu solders. Greater than 1% Ag in SnAg solder is needed to stabilize the Sn grain microstructure and suppress the rapid diffusion process that drives early EM failures. Cu on top of Ni UBM improves the EM reliability. A minor amount of Zn doping in SnAg solder stabilizes both Ag3Sn and Cu6Sn5 IMC networks in the solder microstructure and slows down the EM process.
引用
收藏
页码：922 / +
页数：3
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