An analytical model of mobility in nano-scaled n-MOSFETs

被引：0

作者：

Dai Yue-Hua ^{[1
]}

Chen Jun-Ning ^{[1
]}

Ke Dao-Ming ^{[1
]}

Sun Jia-E ^{[1
]}

Hu Yuan ^{[1
]}

机构：

[1] Anhui Univ, Sch Elect Sci & Technol, Hefei 230039, Peoples R China

来源：

ACTA PHYSICA SINICA | 2006年 / 55卷 / 11期

关键词：

Boltzmann transport equation; nano-scaled MOSFET; mobility; effective electrical field of channeling;

D O I：

10.7498/aps.55.6090

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, a method for calculating mobility of nano-scaled MOSFETs from the Boltzmann transport equation (BTE) is presented. Some approximations are assumed for the BTE in nano-scaled MOSFETs, and an improved distribution function of the carriers is obtained which is used to model the mobility of carriers. An analytical expression of carrier mobility is deduced considering the statistical distribution of carrier velocity and carrier life-span and taking into account especially the interaction between the longitudinal and the transverse fields. The reasonable agreement of the calculated results with simulation validated the new model, which is explicit, simple and physically well grounded.

引用

页码：6090 / 6094

页数：5

共 11 条

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