NH3 sensing properties of nanostructure ZnO thin film prepared by silar method

被引：0
|
作者：
Corlu, Tugba [1 ]
Karaduman, Irmak [1 ]
Yildirim, Memet Ali [2 ]
Ates, Aytunc [3 ]
Acar, Selim [1 ]
机构：
[1] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey
[2] Erzincan Univ, Fac Engn, Dept Elect Elect Engn, Erzincan, Turkey
[3] Yildirim Beyazit Univ, Engn & Nat Sci Fac, Dept Mat Engn, Ankara, Turkey
来源：
HIGH TEMPERATURES-HIGH PRESSURES | 2017年 / 46卷 / 02期
关键词：
Gas Sensor; SILAR method; Ammonia; GAS SENSORS; DOPED ZNO; TRANSPARENT;
D O I：
暂无
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Ammonia (NH3) sensing characteristics of nanostructure ZnO thin film prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method are discussed in this paper. The structural and morphological characterizations of the film are performed by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). The gas sensing characteristics have been studied by exposing the film to various concentrations of NH3 at different operating temperatures within the range of 37-77 degrees C. The nanostructured ZnO thin film has exhibited maximum gas response to 100 ppm NH3 gas exposure at 77 degrees C operating temperature.
引用
收藏
页码：155 / 165
页数：11
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