GaInP/GaInAs/Ge triple junction solar cells for ultra high concentration

被引：6
|
作者：
Barrigon, E. [1 ]
Rey-Stolle, I. [1 ]
Galiana, B. [1 ]
Garcia, I. [1 ]
Algora, C. [1 ]
机构：
[1] Tech Univ Madrid, Solar Energy Inst, Madrid 28040, Spain
来源：
PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES | 2009年
关键词：
D O I：
10.1109/SCED.2009.4800513
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we characterize the first functional, lattice matched, GaInP/GaInAs/Ge triple junction solar cells grown and manufactured in our lab with an efficiency conversion of 31.5% at a concentration level of 1000 suns. This is our first approach for transferring the world record double junction solar cell, also developed in our group, into a Ge substrate. First experimental results are presented and the strategy to improve its efficiency is outlined.
引用
收藏
页码：383 / 386
页数：4
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